Rapid thermal processing of iii v compond semiconductors with application to the fabrication of microwave devices 12 personal authors j f gibbons 13a type of report 13b time covered 14 date of report year month day t s page count final from 41118 to 3131 8 may 88 49 16 supplementary notation the view opinions and or findings. A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species these semiconductors typically form in periodic table groups 13 15 old groups iii v for example of elements from the boron group old group iii boron aluminium gallium indium and from group 15 old group v nitrogen phosphorus arsenic antimony bismuth. Thermal processing is one of the most effective ways to control the phase structure properties and electrophysical parameters of materials for semiconductor devices and integrated circuits the duration of conventional thermal processing ranges from tens of minutes to several hours however rapid thermal processing has shorter time scales. Iii v compound semiconductor material systems this chapter offers a short overview of the employed material systems and of the epitaxy techniques used for the layer structure growth furthermore the gunn diode layer structures considered in this dissertation are described. Ion implantation and laser processing of iii v compound semiconductors with applications to the fabrication of microwave devices authors gibbons j f two major studies were conducted one pertaining to silicon diffusion in gaas using a rapid thermal processing cycle and another concerned with the monolayer surface doping of gaas that
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